The GTRB266908FC-V1 from MACOM is a High-Electron-Mobility Transistor (HEMT) that operates from 2515 to 2675 MHz. It delivers an output power of 500 W (P3dB) with a gain of 15 dB and has an efficiency of 52%. This transistor is manufactured using a Gallium-Nitride (GaN) on Silicon Carbide (SiC) process and requires a DC supply of 48 V. It is available in a surface-mount thermally-enhanced package with earless flange and can be used in multi standard cellular power amplifier applications.
