The GTVA212701FA from MACOM is a GaN on SiC High Electron Mobility Transistor (HEMT) that operates from 2110 to 2200 MHz. The transistor provides an output power of 300 watts with a gain of 19 dB and has a drain efficiency of 68.5% while operating from a 48 V supply. This pulsed / CW device has a pulse width of 10 µs and a duty cycle of 10%. The RoHS-compliant GTVA212701FA features input matching and is available in a thermally-enhanced earless package. It is ideal for WCDMA wireless infrastructure applications.
