The GTVA261802FC from MACOM is a GaN on SiC HEMT that operates from 2620 to 2690 MHz. This pulsed CW Transistor provides an output power (P3dB) of 170 watts with a gain of 15 dB and has a drain efficiency of 65.5%, while operating from a 48 V supply. It has a pulse width of 10 µs and a duty cycle of 10%. The transistor is available in a thermally enhanced package with an earless flange and is ideal for use in multi-standard telecom/cellular applications.
