The MAPC-A3006 from MACOM is a GaN-on-SiC Transistor that operates from DC to 8 GHz. It delivers a saturated output power of 16 W (42 dBm) and a small signal gain of 18 dB with a drain efficiency of 66%. This transistor is based on a 0.15 μm GaN-on-SiC production process and is RoHS compliant.
The MAPC-A3006 provides superior performance under CW operation, allowing customers to improve SWaP-C benchmarks in their next-generation systems.It is available in a 12-Lead PDFN package that measures 3 x 4 mm. This transistor is ideal for avionics, military radio, L, S, C-band radar, electronic warfare, ISM, and general amplification applications.
