PTRA084858NF-V1

RF Transistor by MACOM (309 more products)

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The PTRA084858NF from MACOM is a Thermally Enhanced LDMOS FET that operates from 730 to 960 MHz. It provides an output power (P3dB) of 615 W with a gain of 19 dB and has a drain efficiency of up to 50%. The FET is manufactured on MACOM's advanced LDMOS process which provides excellent thermal performance with superior reliability. It operates overs a DC supply of 48 V. The PTRA084858NF is available in a thermally-enhanced plastic overmold package for cool and reliable operation and is ideal for multi-standard cellular power amplifier applications.

Product Specifications

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Product Details

  • Part Number
    PTRA084858NF-V1
  • Manufacturer
    MACOM
  • Description
    615 W Thermally Enhanced LDMOS FET from 730 to 960 MHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    GaN on SiC
  • Application Industry
    Wireless Infrastructure
  • Application Type
    Multi-Standard Cellular Power Amplifiers
  • Application
    Cellular
  • Frequency
    730 to 960 MHz
  • Power
    58 dBm (P3dB)
  • Power(W)
    615 W (P3dB)
  • P1dB
    214 to 468 W
  • Gain
    18.5 to 19 dB
  • VSWR
    10.0:1
  • Supply Voltage
    48 V
  • Breakdown Voltage - Drain-Source
    105 V
  • Voltage - Gate-Source (Vgs)
    2 to 4 V
  • Drain Leakage Current (Id)
    1 to 10 uA
  • Gate Leakage Current (Ig)
    1 uA
  • Lead Free
    Yes
  • Junction Temperature (Tj)
    225 Degree
  • On Resistance
    0.025 to 0.41 Ohms
  • Thermal Resistance
    0.23 to 0.52 °C/W
  • Package Type
    Surface Mount
  • RoHS
    Yes
  • Operating Temperature
    0 to 55 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    ACPR : -36 to -30 dBc, Power Consumption : 87 W

Technical Documents