PTVA101K02EV-V1

RF Transistor by MACOM (309 more products)

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The PTVA101K02EV-V1 from MACOM is an RF LDMOS Transistor that operates from 1030 to 1090 MHz. It provides an output power of 1000 watts with a power gain of 18 dB and a PAE of 65% while operating from a 50 V DC supply. This pulsed device has a pulse width of 128 µs and a duty cycle of 10%. It is capable of withstanding a 10:1 load mismatch under MODE-S pulse conditions and exhibits low thermal resistance. The transistor is available with ESD protection in a thermally enhanced package with a bolt-down flange and is Pb-Free and RoHS Compliant.

Product Specifications

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Product Details

  • Part Number
    PTVA101K02EV-V1
  • Manufacturer
    MACOM
  • Description
    1000 W LDMOS Transistor from 1030 to 1090 MHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Radar
  • Application
    Amplifiers, Radar
  • CW/Pulse
    Pulse
  • Frequency
    1030 MHz / 1090 MHz
  • Power
    59.64 to 60.04 dBm (P1dB), 60.21 to 60.53 dBm (P3dB)
  • Power(W)
    920 to 1010 W (P1dB), 1050 to 1130 W (P3dB)
  • Pulsed Width
    128 us
  • Duty_Cycle
    10 %
  • Gain
    17 to 21 dB
  • Efficiency
    54 to 60 % (P1dB), 55 to 61 % (P3dB)
  • Class
    AB
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    105 V
  • Current
    75 to 115 mA
  • Drain Current
    1 to 10 uA
  • Gate Leakage Current (Ig)
    0.1 uA
  • Lead Free
    Yes
  • Junction Temperature (Tj)
    225 Degree C
  • Package Type
    Flanged
  • Package
    H-36275-4
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

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