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2729-170

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The 2729-170 from Microchip Technology is a RF Transistor with Frequency 2.7 to 2.9 GHz, Power 52.3 dBm, Power(W) 169.82 W, Duty_Cycle 0.1, Power Gain (Gp) 8.2 to 8.6 dB. Tags: Flanged. More details for 2729-170 can be seen below.

Product Specifications

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Product Details

  • Part Number
    2729-170
  • Manufacturer
    Microchip Technology
  • Description
    170 Watts, 38 Volts, 100μs, 10% Radar 2700-2900 MHz

General Parameters

  • Transistor Type
    Bipolar
  • Technology
    Si
  • Application Industry
    Radar
  • Application
    S Band, Radar
  • CW/Pulse
    Pulse
  • Frequency
    2.7 to 2.9 GHz
  • Power
    52.3 dBm
  • Power(W)
    169.82 W
  • Pulsed Power
    170 W
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    8.2 to 8.6 dB
  • VSWR
    2.00:1
  • Collector Emmiter Voltage
    56 to 65 V
  • Supply Voltage
    38 V
  • Input Power
    25.7 W
  • Thermal Resistance
    0.3 C/W
  • Package Type
    Flanged
  • Package
    55KS-1
  • Storage Temperature
    -65 to 200 Degree C

Technical Documents
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