GAN_1200-1400MHZ_1200W_G

Note : Your request will be directed to Microchip Technology.

The GAN_1200-1400MHZ_1200W_G from Microchip Technology is a RF Transistor with Frequency 1200 to 1400 MHz, Power 60.79 dBm, Power(W) 1200 W, Duty_Cycle 10%, Power Gain (Gp) 17 dB. Tags: Ceramic. More details for GAN_1200-1400MHZ_1200W_G can be seen below.

Product Specifications

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Product Details

  • Part Number
    GAN_1200-1400MHZ_1200W_G
  • Manufacturer
    Microchip Technology
  • Description
    1200 W, GaN Transistor from 1200 to 1400 MHz

General Parameters

  • Technology
    GaN
  • Application Industry
    Radar
  • Application
    L Band, Radar
  • CW/Pulse
    CW
  • Frequency
    1200 to 1400 MHz
  • Power
    60.79 dBm
  • Power(W)
    1200 W
  • Pulsed Width
    300 uSec
  • Duty_Cycle
    10%
  • Power Gain (Gp)
    17 dB
  • Efficiency
    60%
  • Supply Voltage
    50 V
  • Package Type
    Ceramic
  • Grade
    Commercial, Military