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GAN_2700-3600MHz_110W

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The GAN_2700-3600MHz_110W from Microchip Technology is a RF Transistor with Frequency 2700 to 3100 MHz, Power 50.79 dBm, Power(W) 120 W, Duty_Cycle 10%, Power Gain (Gp) 16.5 dB. Tags: Ceramic. More details for GAN_2700-3600MHz_110W can be seen below.

Product Specifications

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Product Details

  • Part Number
    GAN_2700-3600MHz_110W
  • Manufacturer
    Microchip Technology
  • Description
    120 W, GaN Transistor from 2700 to 3100 MHz

General Parameters

  • Technology
    GaN
  • Application Industry
    Radar
  • Application
    S Band, Radar
  • CW/Pulse
    CW
  • Frequency
    2700 to 3100 MHz
  • Power
    50.79 dBm
  • Power(W)
    120 W
  • Pulsed Width
    200 uSec
  • Duty_Cycle
    10%
  • Power Gain (Gp)
    16.5 dB
  • Efficiency
    64%
  • Supply Voltage
    50 V
  • Package Type
    Ceramic
  • Grade
    Commercial, Military
View details on the manufacturer's website
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