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GAN_960-1215MHZ_650W

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The GAN_960-1215MHZ_650W from Microchip Technology is a RF Transistor with Frequency 960 to 1215 MHz, Power 58.12 dBm, Power(W) 650 W, Duty_Cycle 10%, Power Gain (Gp) 17 dB. Tags: Ceramic. More details for GAN_960-1215MHZ_650W can be seen below.

Product Specifications

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Product Details

  • Part Number
    GAN_960-1215MHZ_650W
  • Manufacturer
    Microchip Technology
  • Description
    650 W, GaN on SiC Transistor from 960 to 1215 MHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Avionics
  • CW/Pulse
    Pulse
  • Frequency
    960 to 1215 MHz
  • Power
    58.12 dBm
  • Power(W)
    650 W
  • Pulsed Width
    128 uSec
  • Duty_Cycle
    10%
  • Power Gain (Gp)
    17 dB
  • Efficiency
    60%
  • Class
    Class AB
  • Supply Voltage
    50 V
  • Package Type
    Ceramic
  • Grade
    Commercial, Military
View details on the manufacturer's website
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