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MGFK48G3745

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The MGFK48G3745 from Mitsubishi Electric US is a GaN HEMT that operates in the Ku-band from 13.75 to 14.5 GHz. It delivers an output power of 70 W with a linear power gain of 10 dB and a power-added efficiency of 33%. This HEMT has an N-channel Schottky gate and a 3rd-order intermodulation distortion of -25 dBc. It requires a DC supply of 24 V and consumes 1.44 A of current. This transistor is available in a package that measures 21.0 x 11.5 x 4.0 mm and is ideal for use in Class AB linear amplifiers for Ku-band SATCOM applications.

Product Specifications

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Product Details

  • Part Number
    MGFK48G3745
  • Manufacturer
    Mitsubishi Electric US, Inc.
  • Description
    70 W GaN HEMT from 13.75 to 14.5 GHz for Ku-Band SATCOM Applications

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    SATCOM
  • Application
    Ku Band
  • CW/Pulse
    CW
  • Frequency
    13.75 to 14.5 GHz
  • Power
    48.45 dBm
  • Power(W)
    70 W
  • Power Gain (Gp)
    9 to 10 dB
  • Power Added Effeciency
    33 %
  • Polarity
    N-channel
  • Supply Voltage
    24 V
  • Input Power
    44 dBm
  • Voltage - Drain-Source (Vdss)
    24 V
  • Drain Bias Current
    1440 mA
  • Quiescent Drain Current
    1440 mA
  • Power Dissipation (Pdiss)
    225 W
  • IMD
    -25 dBc
  • Package Type
    Flanged
  • Dimension
    21 x 12.9 x 4 mm
  • RoHS
    Yes
  • Storage Temperature
    -55 to 125 Degree C

Technical Documents
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