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RD100HHF1C

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The RD100HHF1C from Mitsubishi Electric US, Inc. is a RF Transistor with Frequency DC to 30 MHz, Power 50 to 50.41 dBm, Power(W) 109.9 W, Gain 11.5 dB, Supply Voltage 12.5 V. Tags: Flanged. More details for RD100HHF1C can be seen below.

Product Specifications

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Product Details

  • Part Number
    RD100HHF1C
  • Manufacturer
    Mitsubishi Electric US, Inc.
  • Description
    DC to 30 MHz, MOSFET Transistor

General Parameters

  • Transistor Type
    MOSFET
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure, Broadcast
  • Application
    Mobile, Radio, HF
  • CW/Pulse
    CW
  • Frequency
    DC to 30 MHz
  • Power
    50 to 50.41 dBm
  • Power(W)
    109.9 W
  • Gain
    11.5 dB
  • Supply Voltage
    12.5 V
  • Threshold Voltage
    1.5 to 4.5 V
  • Input Power
    7 W
  • Drain Bias Current
    0.01 mA
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -40 to 175 Degree C

Technical Documents
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