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RD35HUF2

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The RD35HUF2 from Mitsubishi Electric US, Inc. is a RF Transistor with Frequency 175 to 530 MHz, Power 46.53 dBm, Power(W) 44.98 W, Supply Voltage 12.5 V, Input Power 3 W. Tags: Flanged. More details for RD35HUF2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RD35HUF2
  • Manufacturer
    Mitsubishi Electric US, Inc.
  • Description
    175 to 530 MHz, MOSFET Transistor

General Parameters

  • Transistor Type
    MOSFET
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure, Broadcast
  • Application
    Mobile, Radio
  • CW/Pulse
    CW
  • Frequency
    175 to 530 MHz
  • Power
    46.53 dBm
  • Power(W)
    44.98 W
  • Supply Voltage
    12.5 V
  • Threshold Voltage
    1.6 to 2.4 V
  • Input Power
    3 W
  • Drain Bias Current
    0.15 mA
  • Quiescent Drain Current
    500 to 1000 mA
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -40 to 175 Degree C

Technical Documents
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