The MwT-9F from Microwave Technology is a GaAs FET that operates up to 18 GHz. It provides a small signal gain of 11 dB, a P1dB of 26.5 dBm, and has a power-added efficiency of 35%. The transistor has a nominal gate length of 0.25 microns and a gate width of 750 microns, making it ideal for applications requiring medium linear power. It can be used as the driver stage in high power communication amplifiers or in broad-band military amplifiers. This transistor is available as a Chip/die and in three other package types. It is suitable for use in commercial, military, and high-reliability space applications.
