The A2G22S251-01S is a 48 Watt RF Power GaN Transistor that operates from 1805 to 2200 MHz. This GaN Transistor is part of NXP's Airfast family of transistors. In a symmetric Doherty, it delivers an average RF output power of 71 W (450 W peak), gain of 16.5 dB, and drain efficiency of 46% in concurrent multiband operation at 8 dB back-off configured. The part is housed in a NI-400S-2S air-cavity ceramic package.
