The A2G26H281-04S from NXP Semiconductors is asymmetrical Doherty RF power GaN transistor that operates from 2496 to 2690 MHz. It delivers an output power of 50 Watts with a gain of 15.3 dB and drain efficiency of 57%. This transistor requires a supply voltage of 48 Volts DC and consumes 150 mA of current. It is available in a NI-780S-4L package.
