The A2V09H525-04N is an asymmetrical Doherty Airfast RF power LDMOS transistor that operates from 720 to 960 MHz. It delivers an output power of 120 Watts with a gain of 18.9 dB at 940 MHz and efficiency of 56.%. The device requires a supply voltage of 48 V and consumes up to 688 mA of current. The transistor is available in a flanged surface mount package that is designed for cellular base station and digital predistortion error correction system applications.
