The AFT05MP075GN from NXP Semiconductors is a RF Transistor with Frequency 136 to 520 MHz, Power 48.45 dBm, Power(W) 69.98 W, P1dB 48.5 dBm, Power Gain (Gp) 18.5 dB. Tags: Flanged. More details for AFT05MP075GN can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    AFT05MP075GN
  • Manufacturer
    NXP Semiconductors
  • Description
    Airfast Broadband RF Power LDMOS Transistor, 136-520 MHz, 70 W, 12.5 V

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure, Broadcast
  • Application
    Mobile, Radio
  • CW/Pulse
    CW
  • Frequency
    136 to 520 MHz
  • Power
    48.45 dBm
  • Power(W)
    69.98 W
  • CW Power
    70 W
  • P1dB
    48.5 dBm
  • Power Gain (Gp)
    18.5 dB
  • VSWR
    65.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    12.5 V
  • Threshold Voltage
    1.7 to 2.5 Vdc
  • Voltage - Gate-Source (Vgs)
    -6 to 12 Vdc
  • Drain Efficiency
    0.685
  • Drain Current
    400 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.29 °C/W
  • Package Type
    Flanged
  • Package
    TO--270WBG--4
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents