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  6. MMRF1005H

The MMRF1005H from NXP Semiconductors is a RF Transistor with Frequency 1.2 to 1.4 GHz, Power 53.62 to 53.62 dBm, Power(W) 230.14 W, P1dB 54 dBm, Duty_Cycle 0.1. Tags: Flanged. More details for MMRF1005H can be seen below.

Product Specifications

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Product Details

  • Part Number
    MMRF1005H
  • Manufacturer
    NXP Semiconductors
  • Description
    Lateral N-Channel RF Power MOSFET, 1300 MHz, 250 W, 50 V

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure, Aerospace & Defence, Radar
  • Application
    L Band, Radar
  • CW/Pulse
    Pulse
  • Frequency
    1.2 to 1.4 GHz
  • Power
    53.62 to 53.62 dBm
  • Power(W)
    230.14 W
  • P1dB
    54 dBm
  • Peak Output Power
    1000 W
  • Pulsed Power
    250 W
  • Pulsed Width
    200 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    21.5 to 24 dB
  • Input Return Loss
    -25 dB
  • VSWR
    10.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    50 V
  • Threshold Voltage
    1 to 2.7 Vdc
  • Breakdown Voltage - Drain-Source
    120 V
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.57
  • Drain Current
    10 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.07 °C/W
  • Package Type
    Flanged
  • Package
    NI--780H--2L
  • RoHS
    Yes
  • Operating Temperature
    150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
View details on the manufacturer's website
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