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  6. MMRF1009HS

The MMRF1009HS from NXP Semiconductors is a RF Transistor with Frequency 960 MHz to 1.215 GHz, Power 56.99 dBm, Power(W) 500.03 W, P1dB 57 dBm, Duty_Cycle 0.1. Tags: Flanged. More details for MMRF1009HS can be seen below.

Product Specifications

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Product Details

  • Part Number
    MMRF1009HS
  • Manufacturer
    NXP Semiconductors
  • Description
    Pulse Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Aerospace & Defence, Commercial, Avionics
  • CW/Pulse
    Pulse
  • Frequency
    960 MHz to 1.215 GHz
  • Power
    56.99 dBm
  • Power(W)
    500.03 W
  • P1dB
    57 dBm
  • Peak Output Power
    500 W
  • Pulsed Power
    500 W
  • Pulsed Width
    128 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    18.5 to 22 dB
  • Input Return Loss
    -18 to -9 dB
  • VSWR
    10.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    50 V
  • Threshold Voltage
    0.9 to 2.4 Vdc
  • Breakdown Voltage - Drain-Source
    110 V
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.62
  • Drain Current
    200 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.044 °C/W
  • Package Type
    Flanged
  • Package
    NI--780S--2L
  • RoHS
    Yes
  • Operating Temperature
    150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
View details on the manufacturer's website
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