The MMRF1305HS is a ruggedized 100 watt RF power LDMOS transistor that operates from 1.8 MHz to 2000 MHz. It requires a supply from 30 to 50 V and is capable of performing into 65:1 VSWRs making it suitable for high load mismatch applications. This transistor is ideal for both narrowband and broadband CW pulse applications such as military/radio communications and radar applications.

Product Specifications

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Product Details

  • Part Number
    MMRF1305HS
  • Manufacturer
    NXP Semiconductors
  • Description
    Broadband RF Power LDMOS Transistor, 1.8-2000 MHz, 100 W, 50 V

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure, Aerospace & Defence, Radar, Broadcast
  • Application
    HF, VHF, UHF, Radio, Communication System, Radar
  • CW/Pulse
    Pulse, CW
  • Frequency
    1.8 MHz to 2 GHz
  • Power
    50 dBm
  • Power(W)
    100 W
  • CW Power
    100 W
  • P1dB
    50 dBm
  • Peak Output Power
    100 W
  • Pulsed Power
    100 W
  • Pulsed Width
    200 us
  • Duty_Cycle
    0.2
  • Power Gain (Gp)
    25 to 27 dB
  • Input Return Loss
    -14 to -9 dB
  • VSWR
    65.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    50 V
  • Threshold Voltage
    1.6 to 2.6 Vdc
  • Breakdown Voltage - Drain-Source
    133 to 141 V
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.7
  • Drain Current
    100 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.38 °C/W
  • Package Type
    Flanged
  • Package
    NI--780S--4L
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

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