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  6. MMRF1316N

The MMRF1316N from NXP Semiconductors is a RF Transistor with Frequency 1.8 to 600 MHz, Power 54.77 dBm, Power(W) 299.92 W, P1dB 54.8 dBm, Duty_Cycle 0.2. Tags: Flanged. More details for MMRF1316N can be seen below.

Product Specifications

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Product Details

  • Part Number
    MMRF1316N
  • Manufacturer
    NXP Semiconductors
  • Description
    WIDEBAND RF POWER LDMOS TRANSISTOR, 1.8--600 MHz, 300 W CW, 50 V

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure, Aerospace & Defence, Radar, Broadcast
  • Application
    HF, VHF, UHF, Radio, Radar, Mobile, Military, Communication System
  • CW/Pulse
    Pulse, CW
  • Frequency
    1.8 to 600 MHz
  • Power
    54.77 dBm
  • Power(W)
    299.92 W
  • CW Power
    300 to 361 W
  • P1dB
    54.8 dBm
  • Peak Output Power
    300 W
  • Pulsed Power
    300 W
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.2
  • Power Gain (Gp)
    26 to 28.5 dB
  • Input Return Loss
    -20 to -9 dB
  • VSWR
    65.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    50 V
  • Threshold Voltage
    1.8 to 2.8 Vdc
  • Breakdown Voltage - Drain-Source
    133 to 140 V
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.7
  • Drain Current
    100 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.22 °C/W
  • Package Type
    Flanged
  • Package
    TO--270WB--4 PLASTIC
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
View details on the manufacturer's website
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