The MMRF5018HS from NXP Semiconductors is a Power Transistor that operates from 1 to 2700 MHz. It provides an output power of up to 125 W with a power gain of 17.3 dB and a drain efficiency of 40%. This transistor is developed using advanced GaN-on-SiC technology and includes input-matching circuitry for extended bandwidth performance. It requires a DC supply of 50 V and consumes 18 mA of current. The transistor is available in a thermal-resistant flange package and is suitable for use in CW, pulse, and wideband RF applications.
