The MRF13750H is a 750 Watt (CW) LDMOS RF Transistor that operates from 700 to 1300 MHz. It delivers exceptional precision, control and reliability compared to vacuum tube-era technologies such as magnetrons. The MRF13750H supports accurate power control over the full dynamic range from 0 to 750 W, and enables frequency shifting that helps make precise use of RF energy. It delivers 750 W CW at 915 MHz with 67 percent efficiency in a small 3 × 3.8 inch (7.6 × 9.7 cm) pallet. The transistor is designed for industrial, scientific and medical (ISM) applications ranging from 700 to 1300 MHz, especially industrial heating/drying, curing, and material welding, as well as particle accelerators. It is capable of operating for decades, with minimal performance degradation over time, lowering the total cost of ownership. It operates at 50 V, for greater safety than magnetrons. It is available in a small 3 × 3.8 inch (7.6 × 9.7 cm) pallet.

Product Specifications

View similar products

Product Details

  • Part Number
    MRF13750H
  • Manufacturer
    NXP Semiconductors
  • Description
    RF Power LDMOS Transistor 750 W CW over 700-1300 MHz, 50 V

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    ISM, Broadcast
  • Application
    Scientific, Medical, ISM Band
  • CW/Pulse
    Pulse, CW
  • Frequency
    700 MHz to 1.3 GHz
  • Power
    58.13 to 58.75 dBm
  • Power(W)
    749.89 W
  • CW Power
    650 to 750 W
  • P1dB
    58.8 dBm
  • Peak Output Power
    850 W
  • Pulsed Power
    850 W
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.2
  • Power Gain (Gp)
    19 to 22 dB
  • VSWR
    20.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    50 V
  • Threshold Voltage
    1.3 to 2.3 Vdc
  • Breakdown Voltage - Drain-Source
    105 V
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.6709
  • Drain Current
    100 mA
  • Impedance Zs
    50 Ohms
  • Package Type
    Flanged
  • Package
    NI--1230H--4S
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents