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  6. MRF6VP3450H

The MRF6VP3450H from NXP Semiconductors is a RF Transistor with Frequency 470 to 860 MHz, Power 49.54 dBm, Power(W) 89.95 W, P1dB 57.15 dBm, Duty_Cycle 0.025. Tags: Flanged. More details for MRF6VP3450H can be seen below.

Product Specifications

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Product Details

  • Part Number
    MRF6VP3450H
  • Manufacturer
    NXP Semiconductors
  • Description
    Lateral N-Channel Broadband RF Power MOSFET, 860 MHz, 450 W, 50 V

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    ISM, Broadcast, Commercial
  • Application
    ISM Band
  • CW/Pulse
    Pulse
  • Frequency
    470 to 860 MHz
  • Power
    49.54 dBm
  • Power(W)
    89.95 W
  • P1dB
    57.15 dBm
  • Peak Output Power
    450 W
  • Pulsed Width
    50 us
  • Duty_Cycle
    0.025
  • Power Gain (Gp)
    20.5 to 22 dB
  • Input Return Loss
    -3 to -2 dB
  • VSWR
    10.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    50 V
  • Threshold Voltage
    1 to 2.5 Vdc
  • Breakdown Voltage - Drain-Source
    110 V
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.28
  • Drain Current
    1400 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.27 °C/W
  • Package Type
    Flanged
  • Package
    CASE 375D--05, STYLE 1 NI--1230
  • RoHS
    Yes
  • Operating Temperature
    150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
View details on the manufacturer's website
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