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  6. MRF8S9100HS

The MRF8S9100HS from NXP Semiconductors is a RF Transistor with Frequency 920 to 960 MHz, Power 48.57 dBm, Power(W) 71.94 W, P1dB 50.3 dBm, Duty_Cycle 0.1. Tags: Flanged. More details for MRF8S9100HS can be seen below.

Product Specifications

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Product Details

  • Part Number
    MRF8S9100HS
  • Manufacturer
    NXP Semiconductors
  • Description
    GSM, GSM EDGE Lateral N-Channel RF Power MOSFET, 920-960 MHz, 72 W CW, 28 V

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application
    Cellular, Base Station, GSM, EDGE
  • CW/Pulse
    Pulse, CW
  • Frequency
    920 to 960 MHz
  • Power
    48.57 dBm
  • Power(W)
    71.94 W
  • CW Power
    45 to 100 W
  • P1dB
    50.3 dBm
  • Pulsed Width
    10 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    18 to 23 dB
  • Input Return Loss
    -12.4 to -9 dB
  • VSWR
    10.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    28 V
  • Threshold Voltage
    1.4 to 2.9 Vdc
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.5159
  • Drain Current
    500 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.65 °C/W
  • Package Type
    Flanged
  • Package
    CASE 465--06, STYLE 1 NI--780
  • RoHS
    Yes
  • Operating Temperature
    150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
View details on the manufacturer's website
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