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LB501A

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The LB501A from Polyfet RF Devices is a RF Transistor with Frequency 1 to 500 MHz, Power 52 dBm, Power(W) 175 W, Power Gain (Gp) 13 dB, VSWR 10.0:1. Tags: Flanged. More details for LB501A can be seen below.

Product Specifications

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Product Details

  • Part Number
    LB501A
  • Manufacturer
    Polyfet RF Devices
  • Description
    175 W, Si LDMOS Power Transistor

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Aerospace & Defence, Broadcast, Wireless Infrastructure
  • Application
    Radio, Cellular, Base Station, MRI Systems
  • Frequency
    1 to 500 MHz
  • Power
    52 dBm
  • Power(W)
    175 W
  • Power Gain (Gp)
    13 dB
  • Transconductance
    4.8 MOhms
  • VSWR
    10.0:1
  • Drain Gate Voltage
    70 V
  • Breakdown Voltage - Drain-Source
    65 V
  • Voltage - Drain-Source (Vdss)
    28 V
  • Voltage - Gate-Source (Vgs)
    30 V
  • Drain Efficiency
    0.5
  • Drain Current
    23 A
  • Drain Bias Current
    1 mA
  • Quiescent Drain Current
    0.8 A
  • Gate Leakage Current (Ig)
    1 uA
  • Power Dissipation (Pdiss)
    440 W
  • Feedback Capacitance
    7.5 pF
  • Input Capacitance
    150 pF
  • Junction Temperature (Tj)
    200 Degree C
  • Output Capacitance
    100 pF
  • Thermal Resistance
    0.44 Degree C/W
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
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