The QPD0005M from Qorvo is a GaN on SiC Transistor that operates from 2.5 to 5 GHz. It delivers a saturated output power of 37.7 dBm (~6 W) with a gain of 18.6 dB and has a drain efficiency of 74.1%. The transistor requires a DC supply of 48 V and draws 20 mA of current. It is available in a RoHS compliant, plastic overmold DFN package that measures 4.5 x 4.0 mm and is suitable for WCDMA / LTE, macrocell base stations, microcell base stations, small cells, active antennas, 5G massive MIMO, and general-purpose applications.
