The QPD0020 from Qorvo is a GaN RF Power Transistor that operates from DC to 6 GHz. It provides a saturated output power of up to 34.7 Watts with a P3dB gain of 18.8 dB and has a drain efficiency of up to 77.8 %. The device requires a supply voltage of 48 V. This GaN-on-SiC HEMT transistor can support both CW and pulsed mode of operations.
The device is housed in an industry-standard surface-mount QFN package that measures 4x3 mm and is ideal for radar, W-CDMA/LTE, macrocell base station driver, small cell final stage, active antenna, land mobile, and military radio communication applications.
