QPD1000

RF Transistor by Qorvo (103 more products)

Note : Your request will be directed to Qorvo.

QPD1000 Image

The QPD1000 from Qorvo is a discrete GaN on SiC HEMT that operates from 30 MHz to 1.215 GHz. It provides an output power of 15 W with a gain of 19 dB and has a power added efficiency of 78.2%. The transistor requires a supply volatge of 28 V and consumes up to 50 mA of current. It is available in a 5 x 6 mm leadless SMT package and is ideal for handheld radios, radars, jammers and other applications.

Product Specifications

View similar products

Product Details

  • Part Number
    QPD1000
  • Manufacturer
    Qorvo
  • Description
    15 W GaN RF Transistor from 0.03 to 1.215 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Wireless Infrastructure, Radar, Test & Measurement, Broadcast
  • Application
    Military, Mobile Radio, Communication System, Test & Instrumentation, Jammers, Radar
  • CW/Pulse
    Pulse
  • Frequency
    30 MHz to 1.215 GHz
  • Power
    41.76 dBm
  • Power(W)
    15 W
  • Saturated Power
    43.8 dBm
  • Pulsed Width
    557 us
  • Duty_Cycle
    0.1
  • Gain
    19 dB
  • Supply Voltage
    12 to 32 V
  • Voltage - Gate-Source (Vgs)
    -2.8 V
  • Drain Bias Current
    50 mA
  • Quiescent Drain Current
    50 mA
  • Impedance Zs
    50 Ohms
  • Package Type
    Surface Mount
  • Package
    5 x 6 mm
  • RoHS
    Yes

Technical Documents