IE26110P

RF Transistor by RFHIC | Visit website (83 more products)

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The IE26110P from RFHIC is a RF Transistor with Frequency 2.5 to 2.69 GHz, Power 50.41 dBm, Power(W) 109.9 W, Saturated Power 50.41 dBm, Gain 19.1 dB. Tags: Flanged. More details for IE26110P can be seen below.

Product Specifications

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Product Details

  • Part Number
    IE26110P
  • Manufacturer
    RFHIC
  • Description
    GaN Power Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Wireless Infrastructure, Wireless Communication
  • Application
    WiMAX, 4G / LTE, 3G / WCDMA, GSM
  • CW/Pulse
    CW
  • Frequency
    2.5 to 2.69 GHz
  • Power
    50.41 dBm
  • Power(W)
    109.9 W
  • Saturated Power
    50.41 dBm
  • Gain
    19.1 dB
  • Supply Voltage
    48 V
  • Drain Efficiency
    0.3959
  • Package Type
    Flanged
  • Package
    NS-AS01

Technical Documents