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QPD1015L

RF Transistor by Qorvo (103 more products)
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QPD1015L Image

The QPD1015L from Qorvo is a RF Transistor with Frequency DC to 3.7 GHz, Power 48.13 dBm, Power(W) 65.01 W, Saturated Power 48.5 dBm, Duty_Cycle 0.1. Tags: Flanged. More details for QPD1015L can be seen below.

Product Specifications

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Product Details

  • Part Number
    QPD1015L
  • Manufacturer
    Qorvo
  • Description
    DC to 3.7 GHz, 48 dBm Gan Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Wireless Infrastructure, Radar, Aerospace & Defence, Test & Measurement, Avionics, Broadcast
  • Application
    Military, Mobile Radio, Communication System, Test & Instrumentation, Jammers, Radar
  • CW/Pulse
    Pulse, CW
  • Frequency
    DC to 3.7 GHz
  • Power
    48.13 dBm
  • Power(W)
    65.01 W
  • Saturated Power
    48.5 dBm
  • Pulsed Width
    128 us
  • Duty_Cycle
    0.1
  • Gain
    20 dB
  • Supply Voltage
    12 to 55 V
  • Voltage - Gate-Source (Vgs)
    -2.8 V
  • Drain Bias Current
    65 mA
  • Quiescent Drain Current
    65 mA
  • Package Type
    Flanged
  • RoHS
    Yes

Technical Documents
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