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The QPD1025 from Qorvo is a discrete GaN on SiC HEMT that operates from 1.0 to 1.1 GHz. It provides a gain of 22.5 dB with a power added efficiency of 77.2%. This transistor has significantly better drain efficiency than LDMOS. It delivers an output power of 1800 W (P3dB) while operating on a 65 V supply. It is available in a standard air cavity package and is ideally suited for IFF, avionics and test instrumentation. The device can support both CW and pulsed operations.
800 W GaN Power Transistor from 1930 to 1995 MHz
15.8 W GaN Transistor from 3.4 to 3.8 GHz for Open RAN Applications
2 kW Push-Pull LDMOS Transistor from 88 to 108 MHz
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