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QPD2795

RF Transistor by Qorvo (103 more products)
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QPD2795 Image

The QPD2795 from Qorvo is a RF Transistor with Frequency 2.5 to 2.7 GHz, Power 55.61 dBm, Power(W) 363.92 W, Saturated Power 55.6 dBm, Duty_Cycle 0.1. Tags: Flanged. More details for QPD2795 can be seen below.

Product Specifications

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Product Details

  • Part Number
    QPD2795
  • Manufacturer
    Qorvo
  • Description
    2.5 to 2.7 GHz, HEMT Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Wireless Infrastructure
  • Application
    Macro Cells, Base Station, 3G / WCDMA, 4G / LTE
  • CW/Pulse
    Pulse
  • Frequency
    2.5 to 2.7 GHz
  • Power
    55.61 dBm
  • Power(W)
    363.92 W
  • Saturated Power
    55.6 dBm
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.1
  • Gain
    22 dB
  • Supply Voltage
    48 V
  • Voltage - Gate-Source (Vgs)
    -2.7 V
  • Drain Efficiency
    0.72
  • Quiescent Drain Current
    360 to 700 mA
  • Package Type
    Flanged
  • Package
    Ceramic
  • RoHS
    Yes

Technical Documents
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