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T2G4003532-FL

RF Transistor by Qorvo (103 more products)
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The T2G4003532-FL from TriQuint is a 30 W (P3dB) discrete GaN transistor that operates from DC to 3.5 GHz. It has a gain of 21.6 dB and a PAE (P3dB) of 57.6.7% at 3.5 GHz. This GaN HEMT transistor requires a 32 V supply to operate and is available in surface mount package. It can be used for Military, Radar, Communication, Test Instrumentation applications.

Product Specifications

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Product Details

  • Part Number
    T2G4003532-FL
  • Manufacturer
    Qorvo
  • Description
    30W, 32V DC to 3.5 GHz, GaN RF Flangeless Power Transistor for Military, Civilian Radars, Test Intrumentation and Jammers Applications

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Wireless Infrastructure, Radar, Aerospace & Defence, Test & Measurement, Broadcast
  • Application
    Military, Communication System, Jammers, Test & Instrumentation, Radio, GPS, Radar
  • CW/Pulse
    Pulse, CW
  • Frequency
    DC to 3.5 GHz
  • Power
    44.77 dBm
  • Power(W)
    29.99 W
  • Saturated Power
    44.5 dBm
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.2
  • Gain
    16.5 dB
  • Supply Voltage
    32 V
  • Voltage - Gate-Source (Vgs)
    -2.9 V
  • Drain Efficiency
    0.49
  • Quiescent Drain Current
    150 mA
  • Package Type
    Flanged
  • RoHS
    Yes

Technical Documents
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