The H009C12A from RFHIC is a GaN SiC transistor that operates from 1800 to 2200 MHz. It is part of the OptiGaN Series of transistors that provide the advanced capabilities of GaN technology on a budget. This transistor can be used for 4G/LTE and Open RAN wireless infrastructure applications. It provides 320 W of saturated power, 50 W of average power, power gain of 13.9 dB and a drain efficiency of 56%. It requires a supply voltage of 48 V. This transistor has multiple package options that include a plastic package as well as flanged ceramic packages.
