1. everything RF
  2. RF Components
  3. Transistors
  4. Transistors
  5. RFHIC
  6. H012C12D

H012C12D

RF Transistor by RFHIC | Visit website (83 more products)
Download Datasheet
Request Quote

Note : Your request will be directed to RFHIC.

H012C12D Image

The H012C12D from RFHIC is a RF Transistor with Frequency 758 to 821 MHz, Power 48.98 dBm, Power(W) 79 W, Saturated Power 440 W, Gain 17.5 dB. Tags: Surface Mount, Flanged. More details for H012C12D can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    H012C12D
  • Manufacturer
    RFHIC
  • Description
    440 W, GaN on SiC OptiGaN HEMT from 758 to 821 MHz for 4G LTE & Open RAN Applications

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Cellular, Wireless Infrastructure, Broadcast, Base Station
  • Application
    4G / LTE, Cellular, Point to Point
  • CW/Pulse
    CW
  • Frequency
    758 to 821 MHz
  • Power
    48.98 dBm
  • Power(W)
    79 W
  • Saturated Power
    440 W
  • Gain
    17.5 dB
  • Supply Voltage
    48 V
  • Package Type
    Surface Mount, Flanged
  • Grade
    Commercial
  • Tags
    OptiGaN Series

Technical Documents
View details on the manufacturer's website
View similar products