H017

RF Transistor by RFHIC | Visit website (57 more products)

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The H017 from RFHIC is a RF Transistor with Frequency 1800 to 2700 MHz, Power 33.01 dBm, Power(W) 2 W, Saturated Power 28.2 W, Gain 17.9 dB. Tags: Surface Mount, Flanged. More details for H017 can be seen below.

Product Specifications

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Product Details

  • Part Number
    H017
  • Manufacturer
    RFHIC
  • Description
    28.2 W, GaN on SiC OptiGaN HEMT from 1800 to 2700 MHz for 4G LTE & Open RAN Applications

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Cellular, Wireless Infrastructure, Broadcast, Base Station
  • Application
    4G / LTE, Cellular, Point to Point
  • CW/Pulse
    CW
  • Frequency
    1800 to 2700 MHz
  • Power
    33.01 dBm
  • Power(W)
    2 W
  • Saturated Power
    28.2 W
  • Gain
    17.9 dB
  • Supply Voltage
    48 V
  • Drain Efficiency
    30%
  • Package Type
    Surface Mount, Flanged
  • Grade
    Commercial
  • Tags
    OptiGaN Series

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