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The IE08165P from RFHIC is a RF Transistor with Frequency 770 to 900 GHz, Power 52.17 dBm, Power(W) 164.82 W, Saturated Power 52.17 dBm, Gain 20.9 dB. Tags: Flanged. More details for IE08165P can be seen below.
400 W GaN Asymmetric Doherty Power Transistor from 1.8 to 2.2 GHz for Base Station Applications
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400 W GaN Asymmetric Doherty Power Transistor from 2620 to 2690 MHz
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