IE13550D

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The IE13550D from RFHIC is a GaN Power Transistor that operates from 1295 to 1305 MHz. It provides 550 Watts of CW power with a gain of 15 dB and a drain efficiency of 80% (@50 V). This device is suitable for use in CW, pulse and linear applications. It is available in a surface-mount package that measures 9.28 x 20.6 x 3.6 mm and is designed to replace industrial magnetrons and other vacuum tubes that are currently used in particle accelerators, Linear accelerators, free-electron lasers, and medical systems.

Product Specifications

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Product Details

  • Part Number
    IE13550D
  • Manufacturer
    RFHIC
  • Description
    550 W GaN Power Transistor from 1295 to 1305 MHz

General Parameters

  • Technology
    GaN on SiC, GaN
  • Application Industry
    ISM, RF Energy
  • Application
    RF Energy, ISM Band
  • CW/Pulse
    CW, Pulse
  • Frequency
    1295 to 1305 MHz
  • Power
    57.4 dBm
  • Power(W)
    550 W
  • Saturated Power
    570 W (CW)
  • Power Gain (Gp)
    14.8 to 15 dB
  • Supply Voltage
    50 V
  • Threshold Voltage
    - 3.8 to -2.3 V
  • Voltage - Drain-Source (Vdss)
    150 V
  • Voltage - Gate-Source (Vgs)
    -10 to 2 V
  • Drain Efficiency
    0.8
  • Drain Current
    20 A
  • Drain Leakage Current (Id)
    33.4 mA
  • Gate Leakage Current (Ig)
    -18.4 mA
  • Power Dissipation (Pdiss)
    240 W
  • Package Type
    Flanged
  • Dimension
    9.28 x 20.6 x 3.6 mm
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

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