IE18085P

RF Transistor by RFHIC | Visit website (83 more products)

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The IE18085P from RFHIC is a RF Transistor with Frequency 1.805 to 1.88 GHz, Power 49.29 dBm, Power(W) 84.92 W, Saturated Power 49.29 dBm, Gain 18.9 dB. Tags: Flanged. More details for IE18085P can be seen below.

Product Specifications

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Product Details

  • Part Number
    IE18085P
  • Manufacturer
    RFHIC
  • Description
    GaN Power Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Wireless Infrastructure, Wireless Communication
  • Application
    WiMAX, 4G / LTE, 3G / WCDMA, GSM
  • CW/Pulse
    CW
  • Frequency
    1.805 to 1.88 GHz
  • Power
    49.29 dBm
  • Power(W)
    84.92 W
  • Saturated Power
    49.29 dBm
  • Gain
    18.9 dB
  • Supply Voltage
    48 V
  • Drain Efficiency
    0.3659
  • Package Type
    Flanged
  • Package
    RF12002KR3

Technical Documents