IE18165P

RF Transistor by RFHIC | Visit website (83 more products)

Note : Your request will be directed to RFHIC.

IE18165P Image

The IE18165P from RFHIC is a RF Transistor with Frequency 1.805 to 1.88 GHz, Power 52.17 dBm, Power(W) 164.82 W, Saturated Power 52.17 dBm, Gain 18.3 dB. Tags: Flanged. More details for IE18165P can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IE18165P
  • Manufacturer
    RFHIC
  • Description
    GaN Power Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Wireless Infrastructure, Wireless Communication
  • Application
    WiMAX, 4G / LTE, 3G / WCDMA, GSM
  • CW/Pulse
    CW
  • Frequency
    1.805 to 1.88 GHz
  • Power
    52.17 dBm
  • Power(W)
    164.82 W
  • Saturated Power
    52.17 dBm
  • Gain
    18.3 dB
  • Supply Voltage
    48 V
  • Drain Efficiency
    0.392
  • Package Type
    Flanged
  • Package
    NS-AS01

Technical Documents