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IE24200P

RF Transistor by RFHIC | Visit website (83 more products)
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The IE24200P from RFHIC is a RF Transistor with Frequency 2.4 to 2.5 GHz, Power 53.77 to 54.05 dBm, Power(W) 238.4 to 254.1 W, Saturated Power 200 to 230 W, Gain 13.1 to 13.8 dB. Tags: Surface Mount. More details for IE24200P can be seen below.

Product Specifications

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Product Details

  • Part Number
    IE24200P
  • Manufacturer
    RFHIC
  • Description
    GaN on SiC Transistor from 2.4 to 2.5 GHz

General Parameters

  • Technology
    GaN on SiC, GaN
  • Application Industry
    ISM
  • Application
    ISM Band
  • CW/Pulse
    CW, Pulse
  • Frequency
    2.4 to 2.5 GHz
  • Power
    53.77 to 54.05 dBm
  • Power(W)
    238.4 to 254.1 W
  • Saturated Power
    200 to 230 W
  • Gain
    13.1 to 13.8 dB
  • Power Gain (Gp)
    13.1 to 13.8 dB
  • VSWR
    10.00:1
  • Supply Voltage
    52 Vdc
  • Input Power
    10.4 to 12.5 W
  • Voltage - Drain-Source (Vdss)
    150 V
  • Voltage - Gate-Source (Vgs)
    -10 to 2 V
  • Drain Current
    12 mA
  • Drain Leakage Current (Id)
    11.5 mA
  • Gate Leakage Current (Ig)
    -6.3 mA
  • Power Dissipation (Pdiss)
    120 W
  • Impedance Zs
    50 Ohms
  • Junction Temperature (Tj)
    225 Degrees C
  • Thermal Resistance
    1.17 °C/W
  • Package Type
    Surface Mount
  • Dimension
    10.2x10.2x4.1 mm
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degrees C
  • Storage Temperature
    -65 to 150 Degrees C

Technical Documents
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