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IE26195WD

RF Transistor by RFHIC | Visit website (83 more products)
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The IE26195WD from RFHIC is a RF Transistor with Frequency 2.575 to 2.635 GHz, Power 52.9 dBm, Power(W) 194.98 W, Saturated Power 52.9 dBm, Gain 14.4 dB. Tags: Flanged. More details for IE26195WD can be seen below.

Product Specifications

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Product Details

  • Part Number
    IE26195WD
  • Manufacturer
    RFHIC
  • Description
    GaN Power Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Wireless Infrastructure, Wireless Communication
  • Application
    WiMAX, 4G / LTE, 3G / WCDMA, GSM
  • CW/Pulse
    CW
  • Frequency
    2.575 to 2.635 GHz
  • Power
    52.9 dBm
  • Power(W)
    194.98 W
  • Saturated Power
    52.9 dBm
  • Gain
    14.4 dB
  • Supply Voltage
    48 V
  • Drain Efficiency
    0.5359
  • Package Type
    Flanged
  • Package
    RF24001DKR3

Technical Documents
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