IE27275D

RF Transistor by RFHIC | Visit website (83 more products)

Note : Your request will be directed to RFHIC.

IE27275D Image

The IE27275D from RFHIC is a RF Transistor with Frequency 2.575 to 2.635 GHz, Power 54.39 dBm, Power(W) 274.79 W, Saturated Power 54.39 dBm, Gain 14.1 dB. Tags: Flanged. More details for IE27275D can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IE27275D
  • Manufacturer
    RFHIC
  • Description
    GaN Power Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Wireless Infrastructure, Wireless Communication
  • Application
    WiMAX, 4G / LTE, 3G / WCDMA, GSM
  • CW/Pulse
    CW
  • Frequency
    2.575 to 2.635 GHz
  • Power
    54.39 dBm
  • Power(W)
    274.79 W
  • Saturated Power
    54.39 dBm
  • Gain
    14.1 dB
  • Supply Voltage
    48 V
  • Drain Efficiency
    0.594
  • Package Type
    Flanged
  • Package
    RF24001DKR3