PD20010-E

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PD20010-E Image

The PD20010-E from STMicroelectronics is a RF Transistor with Frequency DC to 2 GHz, Power 40 dBm, Power(W) 10 W, OIP3 10 to 15 W, Power Gain (Gp) 10 to 11 dB. More details for PD20010-E can be seen below.

Product Specifications

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Product Details

  • Part Number
    PD20010-E
  • Manufacturer
    STMicroelectronics
  • Description
    10 W, LDMOS / MOSFET RF Transistor from DC to 2 GHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application
    Industrial
  • CW/Pulse
    CW
  • Frequency
    DC to 2 GHz
  • Power
    40 dBm
  • Power(W)
    10 W
  • OIP3
    10 to 15 W
  • Power Gain (Gp)
    10 to 11 dB
  • Efficiency
    45 to 53 %
  • VSWR
    20.00:1
  • Supply Voltage
    13.6 V
  • Gate Leakage Current (Ig)
    1 uA
  • Input Capacitance
    45 pF
  • Junction Temperature (Tj)
    165 Degree C
  • Output Capacitance
    36 pF
  • Grade
    Commercial
  • Storage Temperature
    -65 to 150 Degree C
  • Tags
    IDEV Series

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