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The PD20010-E from STMicroelectronics is a RF Transistor with Frequency DC to 2 GHz, Power 40 dBm, Power(W) 10 W, OIP3 10 to 15 W, Power Gain (Gp) 10 to 11 dB. More details for PD20010-E can be seen below.
16 W GaN-on-SiC Transistor from DC to 8 GHz
110 W GaN Doherty Power Transistor from 3400 to 3800 MHz
400 W GaN Asymmetric Doherty Power Transistor from 1.8 to 2.2 GHz for Base Station Applications
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