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The PD20010-E from STMicroelectronics is a RF Transistor with Frequency DC to 2 GHz, Power 40 dBm, Power(W) 10 W, OIP3 10 to 15 W, Power Gain (Gp) 10 to 11 dB. More details for PD20010-E can be seen below.
400 W GaN Asymmetric Doherty Power Transistor from 1.8 to 2.2 GHz for Base Station Applications
300 W GaN-on-SiC HEMT Power Transistor from 2.4 to 2.5 GHz
400 W GaN Asymmetric Doherty Power Transistor from 2620 to 2690 MHz
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