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RF5L08350CB4

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RF5L08350CB4 Image

The RF5L08350CB4 from STMicroelectronics is a RF Transistor with Frequency 400 MHz to 1 GHz, Power 56.021 dBm, Power(W) 400 W, Power Gain (Gp) 19 dB, VSWR 10.00:1. Tags: Flanged. More details for RF5L08350CB4 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RF5L08350CB4
  • Manufacturer
    STMicroelectronics
  • Description
    400 W, LDMOS / FET RF Transistor from 400 MHz to 1 GHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application
    Industrial, UHF
  • CW/Pulse
    CW, Pulse
  • Frequency
    400 MHz to 1 GHz
  • Power
    56.021 dBm
  • Power(W)
    400 W
  • Power Gain (Gp)
    19 dB
  • VSWR
    10.00:1
  • Supply Voltage
    50 V
  • Threshold Voltage
    1 to 3 V
  • Drain Gate Voltage
    1
  • Breakdown Voltage - Drain-Source
    110 V
  • Drain Efficiency
    0.61
  • Drain Current
    1 uA
  • Drain Bias Current
    3
  • Leakage Current
    100 nA
  • Junction Temperature (Tj)
    200 Degree C
  • Package Type
    Flanged
  • Grade
    Commercial
  • Storage Temperature
    -65 to 150 Degree C
  • Tags
    IDEV Series

Technical Documents
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