1. everything RF
  2. RF Components
  3. Transistors
  4. Transistors
  5. Sumitomo Electric Device Innovations
  6. ELM1314-9F

ELM1314-9F

Download Datasheet
Request Quote

Note : Your request will be directed to Sumitomo Electric Device Innovations.

ELM1314-9F Image

The ELM1314-9F from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 13.75 to 14.5 GHz, Power 39 to 39.5 dBm, Power(W) 7.94 to 8.91 W, P1dB 39 to 39.5 dBm, Power Gain (Gp) 5 to 6 dB. Tags: Flanged. More details for ELM1314-9F can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    ELM1314-9F
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaAs FET from 13.75 to 14.5 GHz

General Parameters

  • Transistor Type
    FET
  • Technology
    GaAs
  • Application Industry
    Communication, Wireless Infrastructure
  • Application Type
    Ku-Band, Communication Bands
  • Application
    Ku Band, Communication System
  • Frequency
    13.75 to 14.5 GHz
  • Power
    39 to 39.5 dBm
  • Power(W)
    7.94 to 8.91 W
  • P1dB
    39 to 39.5 dBm
  • Power Gain (Gp)
    5 to 6 dB
  • Power Added Effeciency
    0.3
  • Supply Voltage
    10 V
  • Voltage - Gate-Source (Vgs)
    -5 V
  • Drain Current
    2400 to 6200 A
  • IMD
    -25 to -30 dBc
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    3.5 to 4.2 Degree C/W
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -55 to 125 Degree C
  • Note
    Pinch-off Voltage : -3 to -0.5 V, Gain Flatness : 1.2 dB, Channel Temperature Rise : 100 Degree C, Forward Gate Current : 19.5 mA, Channel Temperature : 155 Degree C

Technical Documents
View details on the manufacturer's website
View similar products