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FHX13LG

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The FHX13LG from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 12 GHz, Gain 11 to 13 dB, Noise Figure 0.45 to 0.5 dB, Supply Voltage 2 V, Drain Current 10 to 60 mA. Tags: Surface Mount. More details for FHX13LG can be seen below.

Product Specifications

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Product Details

  • Part Number
    FHX13LG
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaAs HEMT from 12 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaAs
  • Application Industry
    SATCOM, Wireless Infrastructure
  • Application Type
    Telecommunication, TVRO, VSAT
  • Application
    VSAT, Satellite
  • Frequency
    12 GHz
  • Gain
    11 to 13 dB
  • Noise Figure
    0.45 to 0.5 dB
  • Supply Voltage
    2 V
  • Drain Current
    10 to 60 mA
  • Thermal Resistance
    300 to 400 Degree C/W
  • Package Type
    Surface Mount
  • Package
    LG
  • Dimension
    4.78 × 4.78 × 1.3
  • RoHS
    Yes
  • Storage Temperature
    -65 to 175 Degree C
  • Note
    Gate Source Breakdown Voltage : -0.3 V

Technical Documents
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