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The FHX35LP from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 12 GHz, Power 17 dBm, Power(W) 0 to 0.05 W, Gain 8.5 to 10 dB, Noise Figure 1.2 to 1.6 dB. Tags: Surface Mount. More details for FHX35LP can be seen below.
400 W GaN Asymmetric Doherty Power Transistor from 1.8 to 2.2 GHz for Base Station Applications
300 W GaN-on-SiC HEMT Power Transistor from 2.4 to 2.5 GHz
400 W GaN Asymmetric Doherty Power Transistor from 2620 to 2690 MHz
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